Infineon Technologies AG and Xinjiang Goldwind Science and Technology Co., Ltd. have signed a license agreement for core components needed in manufacturing of wind turbines.
According to the agreement, Goldwind gains the license to produce Infineon IGBT (Insulated Gate Bipolar Transistor) stacks used in converters of MW-grade wind turbines. Furthermore, Infineon will supply IGBT stacks to Goldwind. IGBTs are power semiconductors which enable the efficient conversion of the variable frequency output from the generator to a fixed frequency appropriate for the grid in the region concerned. Infineon further plans to set up an application engineering centre in Beijing.
According to the agreement, Goldwind gains the license to produce Infineon IGBT (Insulated Gate Bipolar Transistor) stacks used in converters of MW-grade wind turbines. Furthermore, Infineon will supply IGBT stacks to Goldwind. IGBTs are power semiconductors which enable the efficient conversion of the variable frequency output from the generator to a fixed frequency appropriate for the grid in the region concerned. Infineon further plans to set up an application engineering centre in Beijing.
